GaTeCl - Pmn2¶
1. Structure Summary¶
Last Updated  | 
2022-12-09  | 
Crystal Prototype  | 
ABC  | 
Crystal System  | 
Rectangular  | 
Lattice Constant a (Å)  | 
4.170  | 
Lattice Constant b (Å)  | 
5.951  | 
Space Group  | 
Pmn2  | 
Formation Energy (eV/f.u.)  | 
-1.5132  | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
Cij (N/m)  | 
xx  | 
yy  | 
zz  | 
xx  | 
40.888  | 
10.813  | 
0.000  | 
yy  | 
10.813  | 
23.172  | 
0.000  | 
zz  | 
0.000  | 
0.000  | 
16.031  | 
2.2 Compliance Tensors¶
Sij (m/N)  | 
xx  | 
yy  | 
zz  | 
xx  | 
0.027900  | 
-0.013019  | 
0.000000  | 
yy  | 
-0.013019  | 
0.049231  | 
0.000000  | 
zz  | 
0.000000  | 
0.000000  | 
0.062379  | 
2.3 Orientation-Dependent Mechanical Properties¶
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
20.312  | 
39.094  | 
1.925  | 
Shear Modulus (N/m)  | 
9.693  | 
16.031  | 
1.654  | 
Poisson’s Ratio  | 
0.098  | 
0.467  | 
4.741  | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
21.422  | 
19.572  | 
1.925  | 
Shear Modulus (N/m)  | 
13.320  | 
12.081  | 
1.654  | 
3. Fundmental Electronic Properties¶
Band Character  | 
Indirect  | 
Band Gap (PBE, eV)  | 
2.3061  | 
Band Gap (HSE, eV)  | 
3.1205  | 
Ionization Energy (HSE, eV)  | 
-7.263  | 
Electron Affinity (HSE, eV)  | 
-4.142  | 
Effective Mass of Electron Max. (m0)  | 
0.649  | 
Effective Mass of Electron Min. (m0)  | 
0.195  | 
Effective Mass of Hole Max. (m0)  | 
58.598  | 
Effective Mass of Hole Min. (m0)  | 
1.413  | 
Location of Valence Band Maximum  | 
[0.000000, 0.000000]  | 
Location of Conduction Band Minimum  | 
[0.000000, 0.000000]  | 
3.1 Global Band Structure (PBE)¶
3.2 Band Structure and Density of States (PBE)¶
3.4 Orientation-Dependent effective Masses (PBE)¶
4. Optical Spectrums (HSE)¶
5. Phonon Spectrum and Density of States (PBE)¶
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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