GeAs2 - Pmc2

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1. Structure Summary

Last Updated

2022-12-09

Crystal Prototype

AB2

Crystal System

Rectangular

Lattice Constant a (Å)

3.726

Lattice Constant b (Å)

10.394

Space Group

Pmc2

Formation Energy (eV/f.u.)

0.1713

2. Mechanical Properties (PBE)

2.1 Stiffness Tensors

Cij (N/m)

xx

yy

zz

xx

100.891

-0.067

0.000

yy

-0.067

0.856

0.000

zz

0.000

0.000

0.733

2.2 Compliance Tensors

Sij (m/N)

xx

yy

zz

xx

0.009912

0.000776

0.000000

yy

0.000776

1.168285

0.000000

zz

0.000000

0.000000

1.364256

2.3 Orientation-Dependent Mechanical Properties

../_images/ELASTIC-GeAs2_Pmc2_1.png

2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal

Mechanical Properties

Min

Max

Anisotropy

Young’s Modulus (N/m)

0.856

100.886

117.863

Shear Modulus (N/m)

0.733

0.850

1.159

Poisson’s Ratio

-0.078

0.113

-1.444

2.5 Anisotropic Mechanical Properties Of 2D Polycrystal

Mechanical Properties

Min

Max

Anisotropy

Young’s Modulus (N/m)

25.403

0.848

117.863

Shear Modulus (N/m)

13.102

0.787

1.159

3. Fundmental Electronic Properties

Band Character

Indirect

Band Gap (PBE, eV)

1.1764

Band Gap (HSE, eV)

1.7825

Ionization Energy (HSE, eV)

-5.513

Electron Affinity (HSE, eV)

-3.733

Location of Valence Band Maximum

[0.058824, 0.058824]

Location of Conduction Band Minimum

[0.000000, 0.000000]

3.1 Global Band Structure (PBE)

3.2 Band Structure and Density of States (PBE)

../_images/BAND_LDOS-GeAs2_Pmc2_1.png

3.3 Projected Band Structure and Density of States (PBE)

../_images/BAND_PDOS_As-GeAs2_Pmc2_1.png ../_images/BAND_PDOS_Ge-GeAs2_Pmc2_1.png

3.4 Orientation-Dependent effective Masses (PBE)

4. Optical Spectrums (HSE)

../_images/Optical-GeAs2_Pmc2_1.png

5. Phonon Spectrum and Density of States (PBE)

../_images/phonon_BAND_LDOS-GeAs2_Pmc2_1.png

References

Note

For more details of this database, please refer to the following reference.

[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).

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