HfBrN - P-3m1¶
1. Structure Summary¶
Last Updated |
2022-12-09 |
Crystal Prototype |
ABC |
Crystal System |
Hexagonal |
Lattice Constant a (Å) |
3.626 |
Lattice Constant b (Å) |
3.626 |
Space Group |
P-3m1 |
Formation Energy (eV/f.u.) |
-3.4998 |
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
Cij (N/m) |
xx |
yy |
zz |
xx |
163.923 |
70.150 |
0.000 |
yy |
70.150 |
163.923 |
0.000 |
zz |
0.000 |
0.000 |
46.886 |
2.2 Compliance Tensors¶
Sij (m/N) |
xx |
yy |
zz |
xx |
0.007468 |
-0.003196 |
0.000000 |
yy |
-0.003196 |
0.007468 |
0.000000 |
zz |
0.000000 |
0.000000 |
0.021328 |
2.3 Orientation-Dependent Mechanical Properties¶
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
Mechanical Properties |
Min |
Max |
Anisotropy |
Young’s Modulus (N/m) |
133.902 |
133.903 |
1.000 |
Shear Modulus (N/m) |
46.886 |
46.886 |
1.000 |
Poisson’s Ratio |
0.428 |
0.428 |
1.000 |
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
Mechanical Properties |
Min |
Max |
Anisotropy |
Young’s Modulus (N/m) |
117.037 |
117.036 |
1.000 |
Shear Modulus (N/m) |
46.886 |
46.886 |
1.000 |
3. Fundmental Electronic Properties¶
Band Character |
Indirect |
Band Gap (PBE, eV) |
2.0749 |
Band Gap (HSE, eV) |
2.9981 |
Ionization Energy (HSE, eV) |
-7.041 |
Electron Affinity (HSE, eV) |
-4.043 |
Effective Mass of Electron Max. (m0) |
55.762 |
Effective Mass of Electron Min. (m0) |
-1.617 |
Effective Mass of Hole Max. (m0) |
1.623 |
Effective Mass of Hole Min. (m0) |
1.446 |
Location of Valence Band Maximum |
[-0.050000, -0.050000] |
Location of Conduction Band Minimum |
[0.333333, 0.333333] |
3.1 Global Band Structure (PBE)¶
3.2 Band Structure and Density of States (PBE)¶
3.4 Orientation-Dependent effective Masses (PBE)¶
4. Optical Spectrums (HSE)¶
5. Phonon Spectrum and Density of States (PBE)¶
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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