InBrO - Pmmn¶
1. Structure Summary¶
Last Updated  | 
2022-12-09  | 
Crystal Prototype  | 
ABC  | 
Crystal System  | 
Rectangular  | 
Lattice Constant a (Å)  | 
3.680  | 
Lattice Constant b (Å)  | 
4.138  | 
Space Group  | 
Pmmn  | 
Formation Energy (eV/f.u.)  | 
-2.7695  | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
Cij (N/m)  | 
xx  | 
yy  | 
zz  | 
xx  | 
102.161  | 
30.011  | 
0.000  | 
yy  | 
30.011  | 
71.041  | 
0.000  | 
zz  | 
0.000  | 
0.000  | 
37.703  | 
2.2 Compliance Tensors¶
Sij (m/N)  | 
xx  | 
yy  | 
zz  | 
xx  | 
0.011175  | 
-0.004721  | 
0.000000  | 
yy  | 
-0.004721  | 
0.016071  | 
0.000000  | 
zz  | 
0.000000  | 
0.000000  | 
0.026523  | 
2.3 Orientation-Dependent Mechanical Properties¶
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
62.225  | 
95.307  | 
1.532  | 
Shear Modulus (N/m)  | 
27.257  | 
37.703  | 
1.383  | 
Poisson’s Ratio  | 
0.194  | 
0.422  | 
2.175  | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
58.306  | 
56.167  | 
1.532  | 
Shear Modulus (N/m)  | 
32.999  | 
31.640  | 
1.383  | 
3. Fundmental Electronic Properties¶
Band Character  | 
Indirect  | 
Band Gap (PBE, eV)  | 
2.4221  | 
Band Gap (HSE, eV)  | 
3.4807  | 
Ionization Energy (HSE, eV)  | 
-8.083  | 
Electron Affinity (HSE, eV)  | 
-4.602  | 
Effective Mass of Electron Max. (m0)  | 
2.204  | 
Effective Mass of Electron Min. (m0)  | 
0.147  | 
Effective Mass of Hole Max. (m0)  | 
38.200  | 
Effective Mass of Hole Min. (m0)  | 
-1.505  | 
Location of Valence Band Maximum  | 
[0.000000, 0.000000]  | 
Location of Conduction Band Minimum  | 
[0.000000, 0.000000]  | 
3.1 Global Band Structure (PBE)¶
3.2 Band Structure and Density of States (PBE)¶
3.4 Orientation-Dependent effective Masses (PBE)¶
4. Optical Spectrums (HSE)¶
5. Phonon Spectrum and Density of States (PBE)¶
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
The contents of this web page are licensed under a Creative Commons 4.0 Attribution International License unless another license is specially mentioned in each web page.


