LaIO - P4/nmm¶
1. Structure Summary¶
| Last Updated | 2022-12-09 | 
| Crystal Prototype | ABC | 
| Crystal System | Square | 
| Lattice Constant a (Å) | 4.162 | 
| Lattice Constant b (Å) | 4.162 | 
| Space Group | P4/nmm | 
| Formation Energy (eV/f.u.) | -4.7639 | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
| Cij (N/m) | xx | yy | zz | 
| xx | 86.117 | 16.742 | 0.000 | 
| yy | 16.742 | 86.117 | 0.000 | 
| zz | 0.000 | 0.000 | 34.982 | 
2.2 Compliance Tensors¶
| Sij (m/N) | xx | yy | zz | 
| xx | 0.012068 | -0.002346 | 0.000000 | 
| yy | -0.002346 | 0.012068 | 0.000000 | 
| zz | 0.000000 | 0.000000 | 0.028586 | 
2.3 Orientation-Dependent Mechanical Properties¶
 
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
| Mechanical Properties | Min | Max | Anisotropy | 
| Young’s Modulus (N/m) | 82.862 | 83.281 | 1.005 | 
| Shear Modulus (N/m) | 34.687 | 34.982 | 1.008 | 
| Poisson’s Ratio | 0.190 | 0.194 | 1.021 | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
| Mechanical Properties | Min | Max | Anisotropy | 
| Young’s Modulus (N/m) | 51.430 | 51.430 | 1.005 | 
| Shear Modulus (N/m) | 34.835 | 34.834 | 1.008 | 
3. Fundmental Electronic Properties¶
| Band Character | Indirect | 
| Band Gap (PBE, eV) | 3.2016 | 
| Band Gap (HSE, eV) | 4.8549 | 
| Ionization Energy (HSE, eV) | -7.313 | 
| Electron Affinity (HSE, eV) | -2.458 | 
| Effective Mass of Electron Max. (m0) | 69.765 | 
| Effective Mass of Electron Min. (m0) | -2.409 | 
| Effective Mass of Hole Max. (m0) | 162.511 | 
| Effective Mass of Hole Min. (m0) | -16.844 | 
| Location of Valence Band Maximum | [0.166667, 0.166667] | 
| Location of Conduction Band Minimum | [0.000000, 0.000000] | 
3.1 Global Band Structure (PBE)¶
 
3.2 Band Structure and Density of States (PBE)¶
 
3.4 Orientation-Dependent effective Masses (PBE)¶
 
4. Optical Spectrums (HSE)¶
 
5. Phonon Spectrum and Density of States (PBE)¶
 
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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