Nb3SBr7 - P3m1¶
1. Structure Summary¶
| Last Updated | 2022-12-09 | 
| Crystal Prototype | AB3C7 | 
| Crystal System | Hexagonal | 
| Lattice Constant a (Å) | 7.146 | 
| Lattice Constant b (Å) | 7.146 | 
| Space Group | P3m1 | 
| Formation Energy (eV/f.u.) | -10.0661 | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
| Cij (N/m) | xx | yy | zz | 
| xx | 63.007 | 16.857 | 0.000 | 
| yy | 16.857 | 63.007 | 0.000 | 
| zz | 0.000 | 0.000 | 23.075 | 
2.2 Compliance Tensors¶
| Sij (m/N) | xx | yy | zz | 
| xx | 0.017095 | -0.004574 | 0.000000 | 
| yy | -0.004574 | 0.017095 | 0.000000 | 
| zz | 0.000000 | 0.000000 | 0.043337 | 
2.3 Orientation-Dependent Mechanical Properties¶
 
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
| Mechanical Properties | Min | Max | Anisotropy | 
| Young’s Modulus (N/m) | 58.497 | 58.497 | 1.000 | 
| Shear Modulus (N/m) | 23.075 | 23.075 | 1.000 | 
| Poisson’s Ratio | 0.268 | 0.268 | 1.000 | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
| Mechanical Properties | Min | Max | Anisotropy | 
| Young’s Modulus (N/m) | 39.932 | 39.932 | 1.000 | 
| Shear Modulus (N/m) | 23.075 | 23.075 | 1.000 | 
3. Fundmental Electronic Properties¶
| Band Character | Direct | 
| Band Gap (PBE, eV) | 0.8203 | 
| Band Gap (HSE, eV) | 1.6609 | 
| Ionization Energy (HSE, eV) | -6.413 | 
| Electron Affinity (HSE, eV) | -4.752 | 
| Effective Mass of Electron Max. (m0) | 2.483 | 
| Effective Mass of Electron Min. (m0) | 1.921 | 
| Effective Mass of Hole Max. (m0) | 5.237 | 
| Effective Mass of Hole Min. (m0) | 3.089 | 
| Location of Valence Band Maximum | [0.500000, 0.500000] | 
| Location of Conduction Band Minimum | [0.500000, 0.500000] | 
3.1 Global Band Structure (PBE)¶
 
3.2 Band Structure and Density of States (PBE)¶
 
3.4 Orientation-Dependent effective Masses (PBE)¶
 
4. Optical Spectrums (HSE)¶
 
5. Phonon Spectrum and Density of States (PBE)¶
 
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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