Si3H - P-3m1¶
1. Structure Summary¶
Last Updated |
2022-12-09 |
Crystal Prototype |
AB3 |
Crystal System |
Hexagonal |
Lattice Constant a (Å) |
3.823 |
Lattice Constant b (Å) |
3.823 |
Space Group |
P-3m1 |
Formation Energy (eV/f.u.) |
0.2143 |
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
Cij (N/m) |
xx |
yy |
zz |
xx |
178.486 |
44.108 |
0.000 |
yy |
44.108 |
178.486 |
0.000 |
zz |
0.000 |
0.000 |
67.189 |
2.2 Compliance Tensors¶
Sij (m/N) |
xx |
yy |
zz |
xx |
0.005967 |
-0.001475 |
0.000000 |
yy |
-0.001475 |
0.005967 |
0.000000 |
zz |
0.000000 |
0.000000 |
0.014883 |
2.3 Orientation-Dependent Mechanical Properties¶
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
Mechanical Properties |
Min |
Max |
Anisotropy |
Young’s Modulus (N/m) |
167.586 |
167.586 |
1.000 |
Shear Modulus (N/m) |
67.189 |
67.189 |
1.000 |
Poisson’s Ratio |
0.247 |
0.247 |
1.000 |
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
Mechanical Properties |
Min |
Max |
Anisotropy |
Young’s Modulus (N/m) |
111.297 |
111.297 |
1.000 |
Shear Modulus (N/m) |
67.189 |
67.189 |
1.000 |
3. Fundmental Electronic Properties¶
Band Character |
Indirect |
Band Gap (PBE, eV) |
0.8622 |
Band Gap (HSE, eV) |
1.5954 |
Ionization Energy (HSE, eV) |
-4.933 |
Electron Affinity (HSE, eV) |
-3.522 |
Effective Mass of Electron Max. (m0) |
0.154 |
Effective Mass of Electron Min. (m0) |
0.152 |
Effective Mass of Hole Max. (m0) |
11.588 |
Effective Mass of Hole Min. (m0) |
-0.382 |
Location of Valence Band Maximum |
[-0.062500, -0.062500] |
Location of Conduction Band Minimum |
[-0.437500, -0.437500] |
3.1 Global Band Structure (PBE)¶
3.2 Band Structure and Density of States (PBE)¶
3.4 Orientation-Dependent effective Masses (PBE)¶
4. Optical Spectrums (HSE)¶
5. Phonon Spectrum and Density of States (PBE)¶
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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