SiAs2 - Pmc2¶
1. Structure Summary¶
Last Updated  | 
2022-12-09  | 
Crystal Prototype  | 
AB2  | 
Crystal System  | 
Rectangular  | 
Lattice Constant a (Å)  | 
3.663  | 
Lattice Constant b (Å)  | 
10.311  | 
Space Group  | 
Pmc2  | 
Formation Energy (eV/f.u.)  | 
0.0402  | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
Cij (N/m)  | 
xx  | 
yy  | 
zz  | 
xx  | 
109.444  | 
-0.082  | 
0.000  | 
yy  | 
-0.082  | 
1.034  | 
0.000  | 
zz  | 
0.000  | 
0.000  | 
0.365  | 
2.2 Compliance Tensors¶
Sij (m/N)  | 
xx  | 
yy  | 
zz  | 
xx  | 
0.009138  | 
0.000725  | 
0.000000  | 
yy  | 
0.000725  | 
0.967175  | 
0.000000  | 
zz  | 
0.000000  | 
0.000000  | 
2.739726  | 
2.3 Orientation-Dependent Mechanical Properties¶
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
0.944  | 
109.437  | 
115.937  | 
Shear Modulus (N/m)  | 
0.365  | 
1.026  | 
2.810  | 
Poisson’s Ratio  | 
-0.079  | 
0.600  | 
-7.560  | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
27.579  | 
1.023  | 
115.937  | 
Shear Modulus (N/m)  | 
14.013  | 
0.538  | 
2.810  | 
3. Fundmental Electronic Properties¶
Band Character  | 
Indirect  | 
Band Gap (PBE, eV)  | 
1.3336  | 
Band Gap (HSE, eV)  | 
1.9770  | 
Ionization Energy (HSE, eV)  | 
-5.654  | 
Electron Affinity (HSE, eV)  | 
-3.678  | 
Effective Mass of Electron Max. (m0)  | 
1653.663  | 
Effective Mass of Electron Min. (m0)  | 
-193.406  | 
Effective Mass of Hole Max. (m0)  | 
307.486  | 
Effective Mass of Hole Min. (m0)  | 
1.402  | 
Location of Valence Band Maximum  | 
[0.058824, 0.058824]  | 
Location of Conduction Band Minimum  | 
[0.000000, 0.000000]  | 
3.1 Global Band Structure (PBE)¶
3.2 Band Structure and Density of States (PBE)¶
3.4 Orientation-Dependent effective Masses (PBE)¶
4. Optical Spectrums (HSE)¶
5. Phonon Spectrum and Density of States (PBE)¶
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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