SnO2 - P1¶
1. Structure Summary¶
Last Updated  | 
2022-12-09  | 
Crystal Prototype  | 
AB2  | 
Crystal System  | 
Hexagonal  | 
Lattice Constant a (Å)  | 
3.235  | 
Lattice Constant b (Å)  | 
3.235  | 
Space Group  | 
P1  | 
Formation Energy (eV/f.u.)  | 
-4.4559  | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
Cij (N/m)  | 
xx  | 
yy  | 
zz  | 
xx  | 
127.069  | 
36.269  | 
0.000  | 
yy  | 
36.269  | 
127.069  | 
0.000  | 
zz  | 
0.000  | 
0.000  | 
45.400  | 
2.2 Compliance Tensors¶
Sij (m/N)  | 
xx  | 
yy  | 
zz  | 
xx  | 
0.008568  | 
-0.002445  | 
0.000000  | 
yy  | 
-0.002445  | 
0.008568  | 
0.000000  | 
zz  | 
0.000000  | 
0.000000  | 
0.022026  | 
2.3 Orientation-Dependent Mechanical Properties¶
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
116.717  | 
116.717  | 
1.000  | 
Shear Modulus (N/m)  | 
45.400  | 
45.400  | 
1.000  | 
Poisson’s Ratio  | 
0.285  | 
0.285  | 
1.000  | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
Mechanical Properties  | 
Min  | 
Max  | 
Anisotropy  | 
Young’s Modulus (N/m)  | 
81.669  | 
81.669  | 
1.000  | 
Shear Modulus (N/m)  | 
45.400  | 
45.400  | 
1.000  | 
3. Fundmental Electronic Properties¶
Band Character  | 
Indirect  | 
Band Gap (PBE, eV)  | 
2.5688  | 
Band Gap (HSE, eV)  | 
4.0858  | 
Ionization Energy (HSE, eV)  | 
-9.584  | 
Electron Affinity (HSE, eV)  | 
-5.498  | 
Effective Mass of Electron Max. (m0)  | 
7.954  | 
Effective Mass of Electron Min. (m0)  | 
1.078  | 
Effective Mass of Hole Max. (m0)  | 
0.448  | 
Effective Mass of Hole Min. (m0)  | 
0.442  | 
Location of Valence Band Maximum  | 
[0.250000, 0.250000]  | 
Location of Conduction Band Minimum  | 
[0.000000, 0.000000]  | 
3.1 Global Band Structure (PBE)¶
3.2 Band Structure and Density of States (PBE)¶
3.4 Orientation-Dependent effective Masses (PBE)¶
4. Optical Spectrums (HSE)¶
5. Phonon Spectrum and Density of States (PBE)¶
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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