WS2 - P2

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1. Structure Summary

Last Updated

2022-04-20

Crystal Prototype

AB2

Crystal System

Rectangular

Lattice Constant a (Å)

3.197

Lattice Constant b (Å)

5.714

Space Group

P2

Formation Energy (eV/f.u.)

-1.0823

2. Mechanical Properties (PBE)

2.1 Stiffness Tensors

Cij (N/m)

xx

yy

zz

xx

103.502

18.776

0.000

yy

18.776

136.624

0.000

zz

0.000

0.000

45.181

2.2 Compliance Tensors

Sij (m/N)

xx

yy

zz

xx

0.009909

-0.001362

0.000000

yy

-0.001362

0.007506

0.000000

zz

0.000000

0.000000

0.022133

2.3 Orientation-Dependent Mechanical Properties

../_images/ELASTIC-WS2_P2_1^m.png

2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal

Mechanical Properties

Min

Max

Anisotropy

Young’s Modulus (N/m)

100.922

133.218

1.320

Shear Modulus (N/m)

45.181

49.656

1.099

Poisson’s Ratio

0.137

0.206

1.501

2.5 Anisotropic Mechanical Properties Of 2D Polycrystal

Mechanical Properties

Min

Max

Anisotropy

Young’s Modulus (N/m)

69.419

68.066

1.320

Shear Modulus (N/m)

47.912

47.313

1.099

3. Fundmental Electronic Properties

Band Character

Direct

Band Gap (PBE, eV)

0.0160

Band Gap (HSE, eV)

0.0018

Ionization Energy (HSE, eV)

-5.974

Electron Affinity (HSE, eV)

-5.972

Location of Valence Band Maximum

[0.062500, 0.062500]

Location of Conduction Band Minimum

[0.062500, 0.062500]

3.1 Global Band Structure (PBE)

../_images/3D_band-WS2_P2_1^m.jpg

3.2 Band Structure and Density of States (PBE)

../_images/BAND_LDOS-WS2_P2_1^m.png

3.3 Projected Band Structure and Density of States (PBE)

../_images/BAND_PDOS_W-WS2_P2_1^m.png ../_images/BAND_PDOS_S-WS2_P2_1^m.png

3.4 Orientation-Dependent effective Masses (PBE)

4. Optical Spectrums (HSE)

../_images/Optical-WS2_P2_1^m.png

5. Phonon Spectrum and Density of States (PBE)

../_images/phonon_BAND_LDOS-WS2_P2_1^m.png

References

Note

For more details of this database, please refer to the following reference.

[1] V. Wang, R.-T. Wang, G. Tang, Y.-Y. Liang, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, arXiv:1806.04285.

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