ZrS3 - P2¶
1. Structure Summary¶
| Last Updated | 2022-12-09 | 
| Crystal Prototype | AB3 | 
| Crystal System | Rectangular | 
| Lattice Constant a (Å) | 5.181 | 
| Lattice Constant b (Å) | 3.616 | 
| Space Group | P2 | 
| Formation Energy (eV/f.u.) | -4.6557 | 
2. Mechanical Properties (PBE)¶
2.1 Stiffness Tensors¶
| Cij (N/m) | xx | yy | zz | 
| xx | 130.257 | 15.955 | 0.000 | 
| yy | 15.955 | 84.079 | 0.000 | 
| zz | 0.000 | 0.000 | 25.143 | 
2.2 Compliance Tensors¶
| Sij (m/N) | xx | yy | zz | 
| xx | 0.007860 | -0.001491 | 0.000000 | 
| yy | -0.001491 | 0.012177 | 0.000000 | 
| zz | 0.000000 | 0.000000 | 0.039773 | 
2.3 Orientation-Dependent Mechanical Properties¶
 
2.4 Anisotropic Mechanical Properties Of 2D Singlecrystal¶
| Mechanical Properties | Min | Max | Anisotropy | 
| Young’s Modulus (N/m) | 69.039 | 127.229 | 1.843 | 
| Shear Modulus (N/m) | 25.143 | 43.442 | 1.728 | 
| Poisson’s Ratio | 0.122 | 0.405 | 3.308 | 
2.5 Anisotropic Mechanical Properties Of 2D Polycrystal¶
| Mechanical Properties | Min | Max | Anisotropy | 
| Young’s Modulus (N/m) | 61.562 | 58.639 | 1.843 | 
| Shear Modulus (N/m) | 35.375 | 31.851 | 1.728 | 
3. Fundmental Electronic Properties¶
| Band Character | Indirect | 
| Band Gap (PBE, eV) | 1.0880 | 
| Band Gap (HSE, eV) | 1.9820 | 
| Ionization Energy (HSE, eV) | -6.628 | 
| Electron Affinity (HSE, eV) | -4.646 | 
| Effective Mass of Electron Max. (m0) | 25.615 | 
| Effective Mass of Electron Min. (m0) | 0.361 | 
| Effective Mass of Hole Max. (m0) | 8.792 | 
| Effective Mass of Hole Min. (m0) | 0.425 | 
| Location of Valence Band Maximum | [0.200000, 0.200000] | 
| Location of Conduction Band Minimum | [0.000000, 0.000000] | 
3.1 Global Band Structure (PBE)¶
 
3.2 Band Structure and Density of States (PBE)¶
 
3.4 Orientation-Dependent effective Masses (PBE)¶
 
4. Optical Spectrums (HSE)¶
 
5. Phonon Spectrum and Density of States (PBE)¶
 
References¶
Note
For more details of this database, please refer to the following reference.
[1] V. Wang, G. Tang, Y.-C. Liu, R.-T. Wang, H. Mizuseki, Y. Kawazeo, J. Nara, W.-T. Geng, High-Throughput Computational Screening of Two-Dimensional Semiconductors, Journal of Physical Chemistry Letters 13, 11581 (2022).
License¶
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